Toshiba GT50JR21, N-Channel IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole, Through Hole
- RS-stocknr.:
- 168-7767
- Fabrikantnummer:
- GT50JR21
- Fabrikant:
- Toshiba
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 168-7767
- Fabrikantnummer:
- GT50JR21
- Fabrikant:
- Toshiba
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Toshiba | |
| Channel Type | N | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current (Ic) | 50 A | |
| Maximum Collector Emitter Voltage (Vceo) | 600 V | |
| Pin Count | 3 | |
| Package Type | TO-3P | |
| Mount Type | Through Hole, Through Hole | |
| Automotive Standard | No | |
| Maximum Collector Emitter Saturation Voltage (Vce(SAT)) | 2 V | |
| Maximum Gate Emitter Voltage (VGEO) | 25 V | |
| Maximum Operating Temperature | 175 °C | |
| Maximum Power Dissipation (Pd) | 230 W | |
| Minimum Operating Temperature | -55 °C | |
| Standards/Approvals | RoHS | |
| Alles selecteren | ||
|---|---|---|
Merk Toshiba | ||
Channel Type N | ||
Product Type IGBT | ||
Maximum Continuous Collector Current (Ic) 50 A | ||
Maximum Collector Emitter Voltage (Vceo) 600 V | ||
Pin Count 3 | ||
Package Type TO-3P | ||
Mount Type Through Hole, Through Hole | ||
Automotive Standard No | ||
Maximum Collector Emitter Saturation Voltage (Vce(SAT)) 2 V | ||
Maximum Gate Emitter Voltage (VGEO) 25 V | ||
Maximum Operating Temperature 175 °C | ||
Maximum Power Dissipation (Pd) 230 W | ||
Minimum Operating Temperature -55 °C | ||
Standards/Approvals RoHS | ||
- Land van herkomst:
- JP
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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