STMicroelectronics STB N-Channel MOSFET, 30 A, 600 V Enhancement, 2-Pin TO-263 STB45N60DM6
- RS-stocknr.:
- 214-851
- Fabrikantnummer:
- STB45N60DM6
- Fabrikant:
- STMicroelectronics
Subtotaal (1 eenheid)*
€ 6,67
(excl. BTW)
€ 8,07
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 989 stuk(s) vanaf 02 november 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 + | € 6,67 |
*prijsindicatie
- RS-stocknr.:
- 214-851
- Fabrikantnummer:
- STB45N60DM6
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | STB | |
| Mount Type | Surface | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Maximum Power Dissipation Pd | 210W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.6mm | |
| Length | 15.85mm | |
| Width | 10.4mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series STB | ||
Mount Type Surface | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Maximum Power Dissipation Pd 210W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 4.6mm | ||
Length 15.85mm | ||
Width 10.4mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics High-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Extremely high dv/dt ruggedness
Zener protected
Gerelateerde Links
- STMicroelectronics STB N-Channel MOSFET 600 V Enhancement, 2-Pin TO-263 STB45N60DM6
- STMicroelectronics STB N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 STB18N60M6
- STMicroelectronics STB Series N-Channel MOSFET 250 V Enhancement Mode, 3-Pin TO-263 STB25N018M9
- STMicroelectronics STB37N60 N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- STMicroelectronics STB37N60 N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 STB37N60DM2AG
- STMicroelectronics MDmesh DM2 N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 STB18N60DM2
- STMicroelectronics SuperMESH N-Channel SuperMESH Power MOSFET 600 V Enhancement, 3-Pin TO-263 STB4NK60ZT4
- STMicroelectronics N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263