STMicroelectronics STB37N60 Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-263
- RS-stocknr.:
- 233-3038
- Fabrikantnummer:
- STB37N60DM2AG
- Fabrikant:
- STMicroelectronics
Subtotaal (1 rol van 1000 eenheden)*
€ 3.945,00
(excl. BTW)
€ 4.773,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 09 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 1000 + | € 3,945 | € 3.945,00 |
*prijsindicatie
- RS-stocknr.:
- 233-3038
- Fabrikantnummer:
- STB37N60DM2AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | STB37N60 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 94mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 210W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.6mm | |
| Standards/Approvals | AEC-Q101 | |
| Width | 10.4 mm | |
| Length | 15.85mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series STB37N60 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 94mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 210W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 4.6mm | ||
Standards/Approvals AEC-Q101 | ||
Width 10.4 mm | ||
Length 15.85mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Designed for automotive applications and AEC-Q101 qualified
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Gerelateerde Links
- STMicroelectronics STB37N60 SiC N-Channel MOSFET 600 V, 3-Pin D2PAK STB37N60DM2AG
- STMicroelectronics STB37N60 SiC N-Channel MOSFET 1200 V, 3-Pin H2PAK-2 STH12N120K5-2
- STMicroelectronics ST SiC N-Channel MOSFET Module 600 V Depletion, 3-Pin D2PAK STB33N60DM6
- STMicroelectronics STB N-Channel MOSFET 600 V, 2-Pin D2PAK STB45N60DM6
- Vishay EF Series N-Channel MOSFET 600 V, 3-Pin D2PAK SIHB28N60EF-GE3
- STMicroelectronics MDmesh 4 A 3-Pin D2PAK STB4NK60ZT4
- STMicroelectronics MDmesh 7 A 3-Pin D2PAK STB9NK60ZT4
- STMicroelectronics MDmesh DM2 N-Channel MOSFET 600 V, 3-Pin D2PAK STB18N60DM2