STMicroelectronics STB37N60 Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-263 STB37N60DM2AG
- RS-stocknr.:
- 233-3039
- Fabrikantnummer:
- STB37N60DM2AG
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 6,36
(excl. BTW)
€ 7,70
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 970 stuk(s) vanaf 26 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 6,36 |
| 5 - 9 | € 6,05 |
| 10 - 24 | € 5,45 |
| 25 - 49 | € 4,91 |
| 50 + | € 4,64 |
*prijsindicatie
- RS-stocknr.:
- 233-3039
- Fabrikantnummer:
- STB37N60DM2AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | STB37N60 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 94mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 210W | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Width | 10.4 mm | |
| Standards/Approvals | AEC-Q101 | |
| Length | 15.85mm | |
| Height | 4.6mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series STB37N60 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 94mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 210W | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Width 10.4 mm | ||
Standards/Approvals AEC-Q101 | ||
Length 15.85mm | ||
Height 4.6mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Designed for automotive applications and AEC-Q101 qualified
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Gerelateerde Links
- STMicroelectronics STB37N60 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- STMicroelectronics STB37N60 Type N-Channel MOSFET 1200 V Enhancement, 3-Pin H2PAK
- STMicroelectronics STB37N60 Type N-Channel MOSFET 1200 V Enhancement, 3-Pin H2PAK STH12N120K5-2
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- STMicroelectronics STB Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 SiHB28N60EF-GE3
- STMicroelectronics STB Type N-Channel MOSFET 600 V Enhancement, 2-Pin TO-263 STB45N60DM6
- STMicroelectronics STB Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 STB18N60M6