STMicroelectronics SCT Type N-Channel MOSFET, 110 A, 900 V Enhancement, 7-Pin H2PAK-7 SCT012H90G3AG

Bekijk alle MOSFETs

Subtotaal (1 rol van 1000 eenheden)*

€ 52.039,00

(excl. BTW)

€ 62.967,00

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • Plus verzending 1.000 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per rol*
1000 +€ 52,039€ 52.039,00

*prijsindicatie

RS-stocknr.:
215-219
Fabrikantnummer:
SCT012H90G3AG
Fabrikant:
STMicroelectronics
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

900V

Package Type

H2PAK-7

Series

SCT

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

22 V

Maximum Power Dissipation Pd

625W

Forward Voltage Vf

2.8V

Typical Gate Charge Qg @ Vgs

138nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, AEC-Q101

Length

15.25mm

Width

10.4 mm

Height

4.8mm

Automotive Standard

AEC-Q101

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

Gerelateerde Links