STMicroelectronics SCT Type N-Channel MOSFET, 110 A, 900 V Enhancement, 7-Pin H2PAK-7 SCT012H90G3AG
- RS-stocknr.:
- 215-220
- Fabrikantnummer:
- SCT012H90G3AG
- Fabrikant:
- STMicroelectronics
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|---|---|
| 1 - 9 | € 32,46 |
| 10 - 99 | € 32,06 |
| 100 - 999 | € 31,67 |
| 1000 + | € 31,28 |
*prijsindicatie
- RS-stocknr.:
- 215-220
- Fabrikantnummer:
- SCT012H90G3AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Package Type | H2PAK-7 | |
| Series | SCT | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 138nC | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Forward Voltage Vf | 2.8V | |
| Maximum Power Dissipation Pd | 625W | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.25mm | |
| Height | 4.8mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Width | 10.4mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 900V | ||
Package Type H2PAK-7 | ||
Series SCT | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 138nC | ||
Maximum Gate Source Voltage Vgs 22V | ||
Forward Voltage Vf 2.8V | ||
Maximum Power Dissipation Pd 625W | ||
Maximum Operating Temperature 175°C | ||
Length 15.25mm | ||
Height 4.8mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Width 10.4mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
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