STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 650 V Enhancement, 7-Pin H2PAK-7
- RS-stocknr.:
- 214-955
- Fabrikantnummer:
- SCT027H65G3AG
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 18,42
(excl. BTW)
€ 22,29
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 1.000 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 18,42 |
| 10 - 99 | € 16,57 |
| 100 + | € 15,28 |
*prijsindicatie
- RS-stocknr.:
- 214-955
- Fabrikantnummer:
- SCT027H65G3AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SCT | |
| Package Type | H2PAK-7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 300W | |
| Forward Voltage Vf | 2.9V | |
| Typical Gate Charge Qg @ Vgs | 48.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Width | 10.4 mm | |
| Height | 4.8mm | |
| Length | 15.25mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SCT | ||
Package Type H2PAK-7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 300W | ||
Forward Voltage Vf 2.9V | ||
Typical Gate Charge Qg @ Vgs 48.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Width 10.4 mm | ||
Height 4.8mm | ||
Length 15.25mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
Gerelateerde Links
- STMicroelectronics SCT SiC N-Channel MOSFET 650 V, 7-Pin H2PAK-7 SCT027H65G3AG
- STMicroelectronics SCT SiC N-Channel MOSFET 650 V, 7-Pin H2PAK-7 SCT018H65G3AG
- STMicroelectronics SCT SiC N-Channel MOSFET Module 650 V Depletion, 7-Pin H2PAK-7 SCTH100N65G2-7AG
- STMicroelectronics SCT SiC N-Channel MOSFET 1200 V, 7-Pin H2PAK-7 SCT040H120G3AG
- STMicroelectronics SCT SiC N-Channel MOSFET 900 V, 7-Pin H2PAK-7 SCT012H90G3AG
- STMicroelectronics SCT SiC N-Channel MOSFET 1200 V, 7-Pin H2PAK-7 SCT070H120G3AG
- STMicroelectronics SCT SiC N-Channel MOSFET 1200 V, 7-Pin H2PAK-7 SCT070H120G3-7
- STMicroelectronics SCTH90 SiC N-Channel MOSFET 650 V, 7-Pin H2PAK-7 SCTH90N65G2V-7