Nexperia PSM Type N-Channel MOSFET, 425 A, 40 V Enhancement, 5-Pin LFPAK PSMNR70-40SSHJ
- RS-stocknr.:
- 219-468
- Fabrikantnummer:
- PSMNR70-40SSHJ
- Fabrikant:
- Nexperia
Bulkkorting beschikbaar
Subtotaal (1 rol van 1 eenheid)*
€ 4,77
(excl. BTW)
€ 5,77
(incl. BTW)
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- Plus verzending 2.000 stuk(s) vanaf 29 december 2025
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Rol(len) | Per rol |
|---|---|
| 1 - 9 | € 4,77 |
| 10 - 99 | € 4,30 |
| 100 + | € 3,97 |
*prijsindicatie
- RS-stocknr.:
- 219-468
- Fabrikantnummer:
- PSMNR70-40SSHJ
- Fabrikant:
- Nexperia
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 425A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | PSM | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 144nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Height | 1.6mm | |
| Width | 8 mm | |
| Length | 8mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 425A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series PSM | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 144nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Height 1.6mm | ||
Width 8 mm | ||
Length 8mm | ||
Automotive Standard No | ||
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Low parasitic inductance and resistance
Avalanche rated
Wave solder able
Superfast switching with soft recovery
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