Infineon XHP Dual SiC Dual N-Channel MOSFET, 925 A, 3300 V Tray FF2000UXTR33T2M1BPSA1
- RS-stocknr.:
- 277-194
- Fabrikantnummer:
- FF2000UXTR33T2M1BPSA1
- Fabrikant:
- Infineon
Subtotaal (1 eenheid)*
€ 8.065,13
(excl. BTW)
€ 9.758,81
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk |
|---|---|
| 1 + | € 8.065,13 |
*prijsindicatie
- RS-stocknr.:
- 277-194
- Fabrikantnummer:
- FF2000UXTR33T2M1BPSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Dual N | |
| Maximum Continuous Drain Current | 925 A | |
| Maximum Drain Source Voltage | 3300 V | |
| Package Type | Tray | |
| Series | XHP | |
| Mounting Type | Screw Mount | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 2 | |
| Transistor Material | SiC | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Dual N | ||
Maximum Continuous Drain Current 925 A | ||
Maximum Drain Source Voltage 3300 V | ||
Package Type Tray | ||
Series XHP | ||
Mounting Type Screw Mount | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 2 | ||
Transistor Material SiC | ||
- Land van herkomst:
- DE
The Infineon XHP 2 CoolSiC MOSFET half bridge module 3.3 kV, 1.9 mΩ with XT interconnection technology for decarbonizing transportation.
Integrated body diode
XHP 2 housing
Energy efficiency
High power density
Enhanced lifetime
XHP 2 housing
Energy efficiency
High power density
Enhanced lifetime
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