Infineon FZ1200 Type P-Channel MOSFET, 1.2 kA, 4500 V Depletion Tray FZ1200R45HL4S7BPSA1
- RS-stocknr.:
- 277-199
- Fabrikantnummer:
- FZ1200R45HL4S7BPSA1
- Fabrikant:
- Infineon
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RS heeft dit product niet meer op voorraad.
- RS-stocknr.:
- 277-199
- Fabrikantnummer:
- FZ1200R45HL4S7BPSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.2kA | |
| Maximum Drain Source Voltage Vds | 4500V | |
| Series | FZ1200 | |
| Package Type | Tray | |
| Mount Type | Chassis | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 2400kW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 2.95V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 60749, IEC 60068, IEC 60747 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.2kA | ||
Maximum Drain Source Voltage Vds 4500V | ||
Series FZ1200 | ||
Package Type Tray | ||
Mount Type Chassis | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 2400kW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 2.95V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 60749, IEC 60068, IEC 60747 | ||
Automotive Standard No | ||
- Land van herkomst:
- HU
The Infineon IGBT Module is a IHV-B 4500 V, 1200 A 190 mm single switch IGBT Module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and isolated AlSiC Base Plate. The best solution for your industry applications.
High power density
For compact inverter designs
Standardized housing
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