Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 196 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R022M1HXUMA1
- RS-stocknr.:
- 284-714
- Fabrikantnummer:
- IMT65R022M1HXUMA1
- Fabrikant:
- Infineon
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€ 14,17
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€ 17,15
(incl. BTW)
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- Verzending vanaf 02 september 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 14,17 |
| 10 - 99 | € 12,76 |
| 100 + | € 11,77 |
*prijsindicatie
- RS-stocknr.:
- 284-714
- Fabrikantnummer:
- IMT65R022M1HXUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 196A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolSiC MOSFET 650 V G1 | |
| Package Type | PG-HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 196A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolSiC MOSFET 650 V G1 | ||
Package Type PG-HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon CoolSiC MOSFET 650 V G1 represents a significant advancement in power electronics, engineered with cutting edge silicon carbide technology to enhance performance and reliability. This innovative device boasts optimised switching characteristics, allowing for high efficiency in demanding applications. It excels in challenging environments, offering superior heat resistance and reliability beyond traditional silicon devices. Its versatility enables seamless integration into various systems, including telecommunications, renewable energy, and electric vehicle charging. Designed for exceptional thermal management, it ensures long term performance while reducing overall system footprint. The CoolSiC MOSFET stands as an Ideal solution for modern power conversion, supporting efforts towards energy efficient and Compact designs.
Optimised switching for system efficiency
Compatible with standard driver configurations
Effective in high temperature environments
Reduced switching losses with Kelvin source
Reliable fast body diode design
Supports hard commutation topologies
Improves efficiency and reduces costs
Qualified per JEDEC standards
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