Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 142 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R030M1HXUMA1
- RS-stocknr.:
- 284-715
- Fabrikantnummer:
- IMT65R030M1HXUMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 2000 eenheden)*
€ 10.560,00
(excl. BTW)
€ 12.780,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 02 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2000 + | € 5,28 | € 10.560,00 |
*prijsindicatie
- RS-stocknr.:
- 284-715
- Fabrikantnummer:
- IMT65R030M1HXUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 142A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolSiC MOSFET 650 V G1 | |
| Package Type | PG-HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 294W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 142A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolSiC MOSFET 650 V G1 | ||
Package Type PG-HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 294W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- Land van herkomst:
- AT
The Infineon CoolSiC MOSFET 650 V G1 is engineered for the modern demands of high performance applications, offering a robust solution in a Compact package. Designed with cutting edge solid silicon carbide technology, this semiconductor device combines exceptional reliability and efficiency, making it Ideal for a broad range of applications such as solar inverters, electric vehicle charging infrastructure, and uninterruptible power supplies. With a focus on simplicity and cost effectiveness, it enhances system performance while ensuring superior thermal stability for challenging environments. This device guarantees not just performance but also a seamless integration into various designs, redefining what’s possible in power management.
Optimised switching enhances operational efficiency
Robust body diode supports Advanced applications
Exceptional thermal performance in extreme conditions
Kelvin source reduces switching losses
High avalanche capability for system durability
Compatible with standard drivers for easy integration
Compact design increases power density
Gerelateerde Links
- Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R030M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R072M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R022M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R048M1HXUMA1
- Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R107M1HXUMA1