Infineon OptiMOS SiC N-Channel MOSFET, 99 A, 80 V, 9-Pin PG-TTFN-9 IQE046N08LM5CGATMA1

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RS-stocknr.:
284-761
Fabrikantnummer:
IQE046N08LM5CGATMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

N

Maximum Continuous Drain Current

99 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS

Package Type

PG-TTFN-9

Mounting Type

Surface Mount

Pin Count

9

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET features an power transistor is designed for high performance switch mode power supplies, optimising applications such as synchronous rectification. Its innovative N channel, logic level MOSFET construction ensures remarkable efficiency and minimal energy losses. With a thermal resistance to enhance management under varied temperatures, this product is fully compliant with RoHS and halogen free standards, making it an environmentally friendly option. Built with a focus on reliability, it endures extensive testing, ensuring consistent performance in demanding industrial applications. The advanced design promises exceptional on resistance characteristics, accommodating high currents for efficient power conversion.

Optimised for high performance SMPS
N channel design reduces on resistance
RoHS compliant for environmental safety
Avalanche tested for guaranteed reliability
Logic level operation for low gate voltages
Excellent thermal resistance for cooler operation
Halogen free for eco friendly initiatives

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