Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE050N08NM5CGSCATMA1
- RS-stocknr.:
- 284-771
- Fabrikantnummer:
- IQE050N08NM5CGSCATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 12,07
(excl. BTW)
€ 14,605
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 100 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,414 | € 12,07 |
| 50 - 95 | € 2,294 | € 11,47 |
| 100 - 495 | € 2,126 | € 10,63 |
| 500 - 995 | € 1,954 | € 9,77 |
| 1000 + | € 1,882 | € 9,41 |
*prijsindicatie
- RS-stocknr.:
- 284-771
- Fabrikantnummer:
- IQE050N08NM5CGSCATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 99A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS | |
| Package Type | PG-WHTFN-9 | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 5.0mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 99A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS | ||
Package Type PG-WHTFN-9 | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 5.0mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon MOSFET features an power transistor is an exemplary choice for applications requiring high efficiency and reliability. Optimised for synchronous rectification, this N channel device is part of the OptiMOS 5 series, renowned for its robust thermal performance and low on resistance. The device operates effectively at voltages of up to 80V, making it suitable for a wide range of industrial applications. With features such as 100% avalanche testing and a Pb free design compliant with RoHS standards, this product embodies both safety and sustainability in its manufacturing process. Its small footprint and high performance manifest in the Advanced design that ensures superior thermal characteristics, presenting an excellent option for designers aiming to improve overall system efficiency.
Optimised for synchronous rectification
N channel for easy circuit integration
Low on resistance reduces power losses
Robust thermal resistance for reliability
Avalanche tested for extreme conditions
Pb free lead plating for safety
Halogen free construction meets IEC standards
Qualified per JEDEC industry standards
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