Vishay IRF840LC N-Channel MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-220 IRF840LCPBF
- RS-stocknr.:
- 301-495
- Artikelnummer Distrelec:
- 171-16-254
- Fabrikantnummer:
- IRF840LCPBF
- Fabrikant:
- Vishay
Subtotaal (1 eenheid)*
€ 0,57
(excl. BTW)
€ 0,69
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Laatste voorraad RS
- Plus verzending 1 stuk(s) vanaf 28 september 2026
- Laatste verzending 4.072 stuk(s) vanaf 05 oktober 2026
Aantal stuks | Per stuk |
|---|---|
| 1 + | € 0,57 |
*prijsindicatie
Alternatief
Dit product is momenteel niet beschikbaar. Hierbij onze aanbeveling voor een alternatief product.
Per stuk
€ 3,67
(excl. BTW)
€ 4,44
(incl. BTW)
- RS-stocknr.:
- 301-495
- Artikelnummer Distrelec:
- 171-16-254
- Fabrikantnummer:
- IRF840LCPBF
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220 | |
| Series | IRF840LC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 850mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -30, +30V | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Forward Voltage Vf | 2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.41mm | |
| Height | 9.01mm | |
| Width | 4.7mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220 | ||
Series IRF840LC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 850mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -30, +30V | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Forward Voltage Vf 2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.41mm | ||
Height 9.01mm | ||
Width 4.7mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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