Infineon IPT Type N-Channel MOSFET, 297 A, 135 V Enhancement, 16-Pin PG-HSOF-16 IPTC020N13NM6ATMA1
- RS-stocknr.:
- 349-133
- Fabrikantnummer:
- IPTC020N13NM6ATMA1
- Fabrikant:
- Infineon
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€ 10,03
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€ 12,14
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*prijsindicatie
- RS-stocknr.:
- 349-133
- Fabrikantnummer:
- IPTC020N13NM6ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 297A | |
| Maximum Drain Source Voltage Vds | 135V | |
| Package Type | PG-HSOF-16 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 395W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 159nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 297A | ||
Maximum Drain Source Voltage Vds 135V | ||
Package Type PG-HSOF-16 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 395W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 159nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21 | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon OptiMOS 6 Power Transistor, 120 V is an N-channel, normal level MOSFET designed for high performance power applications. It offers very low on-resistance (RDS(on)), reducing conduction losses and enhancing efficiency. The MOSFET features an excellent gate charge x RDS(on) product (FOM) for superior switching performance. It also boasts a very low reverse recovery charge (Qrr), optimizing efficiency during switching events. With a high avalanche energy rating, it ensures reliability under demanding conditions and operates effectively at 175°C, making it ideal for high temperature environments.
Optimized for high frequency switching and synchronous rectification
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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