Infineon IPT Type N-Channel Power Transistor, 297 A, 135 V Enhancement, 8-Pin PG-HSOF-8 IPT020N13NM6ATMA1
- RS-stocknr.:
- 349-120
- Fabrikantnummer:
- IPT020N13NM6ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 11,69
(excl. BTW)
€ 14,144
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 2.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 5,845 | € 11,69 |
| 20 - 198 | € 5,265 | € 10,53 |
| 200 - 998 | € 4,85 | € 9,70 |
| 1000 - 1998 | € 4,505 | € 9,01 |
| 2000 + | € 4,04 | € 8,08 |
*prijsindicatie
- RS-stocknr.:
- 349-120
- Fabrikantnummer:
- IPT020N13NM6ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 297A | |
| Maximum Drain Source Voltage Vds | 135V | |
| Package Type | PG-HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 159nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 39W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, J-STD-020, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 297A | ||
Maximum Drain Source Voltage Vds 135V | ||
Package Type PG-HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 159nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 39W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, J-STD-020, RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon OptiMOS 6 Power Transistor is an N-channel, normal level MOSFET designed for efficient power switching applications. It offers very low on-resistance (RDS(on)), reducing conduction losses and improving overall performance. With an excellent gate charge x RDS(on) product (FOM), it ensures superior switching efficiency. The MOSFET also features very low reverse recovery charge (Qrr) for better efficiency during switching events.
Optimized for motor drives and battery powered applications
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
Gerelateerde Links
- Infineon IPT N-Channel MOSFET 135 V, 8-Pin PG-HSOF-8 IPTG020N13NM6ATMA1
- Infineon IPT N-Channel MOSFET 135 V, 16-Pin PG-HSOF-16 IPTC020N13NM6ATMA1
- Infineon IPT N-Channel MOSFET 135 V, 8-Pin PG-HSOF-8 IPTG029N13NM6ATMA1
- Infineon IPT N-Channel MOSFET 600 V, 8-Pin PG-HSOF-8 IPT60T065S7XTMA1
- Infineon IPT N-Channel MOSFET 600 V, 8-Pin PG-HSOF-8 IPT60R016CM8XTMA1
- Infineon IPT N-Channel MOSFET 600 V, 8-Pin PG-HSOF-8 IPT60T022S7XTMA1
- Infineon IPT N-Channel MOSFET 120 V, 8-Pin PG-HSOF-8 IPTG017N12NM6ATMA1
- Infineon IPT N-Channel MOSFET 600 V, 8-Pin PG-HSOF-8 IPT60R037CM8XTMA1