Infineon ISG N-Channel Power Transistor, 139 A, 100 V Enhancement, 10-Pin PG-WHITFN-10-1 ISG0616N10NM5HSCATMA1

RS-stocknr.:: 349-152
Fabrikantnummer:: ISG0616N10NM5HSCATMA1
Fabrikant:: Infineon

Infineon ISG N-Channel Power Transistor, 139 A, 100 V Enhancement, 10-Pin PG-WHITFN-10-1 ISG0616N10NM5HSCATMA1

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RS-stocknr.:: 349-152
Fabrikantnummer:: ISG0616N10NM5HSCATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	Power Transistor
	Maximum Continuous Drain Current Id	139A
	Maximum Drain Source Voltage Vds	100V
	Package Type	PG-WHITFN-10-1
	Series	ISG
	Mount Type	Surface
	Pin Count	10
	Maximum Drain Source Resistance Rds	4mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	52nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	167W
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC61249-2-21, RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type Power Transistor
	Maximum Continuous Drain Current Id 139A
	Maximum Drain Source Voltage Vds 100V
	Package Type PG-WHITFN-10-1
	Series ISG
	Mount Type Surface
	Pin Count 10
	Maximum Drain Source Resistance Rds 4mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 52nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 167W
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC61249-2-21, RoHS
	Automotive Standard No

Datasheet - ISG0616N10NM5HSCATMA1

Land van herkomst:: MY

Infineon ISG Series Power Transistor, 100V Drain Source Voltage, 139A Continuous Drain Current - ISG0616N10NM5HSCATMA1

This power transistor is a high-current N-channel enhancement MOSFET designed for surface-mount applications where efficient switching and thermal endurance are required. It operates across a wide temperature span and is intended for power-conversion and high-current switching contexts, offering a balance between low conduction losses and significant heat-handling capability.

Features and Benefits:

• 100V drain rating enables high-voltage switching capability
• 4mΩ Rds(on) reduces conduction losses under heavy load
• 139A continuous current supports high-current designs
• 167W power dissipation assists sustained thermal loads
• 52nC gate charge enables predictable switching performance
• Surface-mount PG-WHITFN-10-1 package simplifies automated assembly

Applications

• Suitable for high-current DC-DC converters in power supplies
• Ideal for synchronous rectification in power management
• Used with motor-drive stages requiring high continuous current
• Can be used for server and telecom power distribution units
• Appropriate for industrial switching where elevated temperatures occur

What gate-drive considerations are necessary for efficient switching?

The typical gate charge of 52nC at the specified gate voltage requires a driver capable of sourcing and sinking sufficient peak current to achieve the desired rise and fall times while managing switching losses.

How does the device handle thermal stress in compact layouts?

With 167W maximum dissipation, the thermal layout should include adequate copper area and thermal vias beneath the package to spread heat and maintain junction temperatures within limits.

What voltage limits must be observed to avoid device damage?

The maximum drain-source voltage is 100V and the gate-source voltage must not exceed 20V to prevent avalanche or gate-oxide stress.

How robust is the device for deployments in extreme ambient conditions?

It operates across a temperature range from -55°C up to 175°C, allowing use in environments with severe temperature variation.