Infineon ISG N-Channel Power Transistor, 299 A, 40 V Enhancement, 10-Pin PG-VITFN-10 ISG0613N04NM6HATMA1
- RS-stocknr.:
- 349-393
- Fabrikantnummer:
- ISG0613N04NM6HATMA1
- Fabrikant:
- Infineon
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€ 9,34
(excl. BTW)
€ 11,30
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- Verzending vanaf 08 maart 2027
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Aantal stuks | Per stuk | Per verpakking* | Bespaar |
|---|---|---|---|
| 2 - 18 | € 4,67 | € 9,34 | - |
| 20 - 198 | € 4,20 | € 8,40 | 10% |
| 200 - 998 | € 3,875 | € 7,75 | 17% |
| 1000 - 1998 | € 3,595 | € 7,19 | 23% |
| 2000 + | € 3,22 | € 6,44 | 31% |
*prijsindicatie
- RS-stocknr.:
- 349-393
- Fabrikantnummer:
- ISG0613N04NM6HATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 299A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | ISG | |
| Package Type | PG-VITFN-10 | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 0.88mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Maximum Power Dissipation Pd | 167W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249‑2‑21, JEDEC | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Power Transistor | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 299A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series ISG | ||
Package Type PG-VITFN-10 | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 0.88mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Maximum Power Dissipation Pd 167W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249‑2‑21, JEDEC | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon OptiMOS 6 dual N-channel 40 V MOSFETs in a scalable power block package. Dual N-channel MOSFETs in PQFN 6.3x6.0 features very low RDS(on) of 0.88 mΩ each with Q1/Q2 in a half-bridge configuration.
Minimized conduction losses
Reduced voltage overshoot
High power capability
Superior thermal performance
Lowest loop inductance
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