Infineon ISZ Type N-Channel Power Transistor, 26 A, 200 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ520N20NM6ATMA1

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€ 11,30

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  • Verzending vanaf 03 april 2026
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1000 +€ 1,458€ 7,29

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RS-stocknr.:
349-157
Fabrikantnummer:
ISZ520N20NM6ATMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

Power Transistor

Channel Type

Type N

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

200V

Package Type

PG-TSDSON-8FL

Series

ISZ

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

88W

Typical Gate Charge Qg @ Vgs

9.9nC

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249‑2‑21, JEDEC, J-STD-020, RoHS

Automotive Standard

No

Land van herkomst:
MY
The Infineon OptiMOS 6 MOSFET is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability. The OptiMOS 6 200 V technology was designed for optimal performance in motor drive applications such as LEV, forklifts, and drones. The new OptiMOS 6 features industry leading RDS(on), improved switching and current sharing capability, enabling high power density, less paralleling, and excellent EMI performance.

Low conduction losses

Low switching losses

Stable operation with improved EMI

Less paralleling required

Better current sharing when paralleling

Environmentally friendly

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