Infineon ISZ Type N-Channel Power Transistor, 26 A, 200 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ520N20NM6ATMA1
- RS-stocknr.:
- 349-157
- Fabrikantnummer:
- ISZ520N20NM6ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 8,24
(excl. BTW)
€ 9,97
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 5.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,648 | € 8,24 |
| 50 - 95 | € 1,568 | € 7,84 |
| 100 - 495 | € 1,45 | € 7,25 |
| 500 - 995 | € 1,334 | € 6,67 |
| 1000 + | € 1,286 | € 6,43 |
*prijsindicatie
- RS-stocknr.:
- 349-157
- Fabrikantnummer:
- ISZ520N20NM6ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | ISZ | |
| Package Type | PG-TSDSON-8FL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 9.9nC | |
| Maximum Power Dissipation Pd | 88W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249‑2‑21, JEDEC, J-STD-020, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series ISZ | ||
Package Type PG-TSDSON-8FL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 9.9nC | ||
Maximum Power Dissipation Pd 88W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249‑2‑21, JEDEC, J-STD-020, RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon OptiMOS 6 MOSFET is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability. The OptiMOS 6 200 V technology was designed for optimal performance in motor drive applications such as LEV, forklifts, and drones. The new OptiMOS 6 features industry leading RDS(on), improved switching and current sharing capability, enabling high power density, less paralleling, and excellent EMI performance.
Low conduction losses
Low switching losses
Stable operation with improved EMI
Less paralleling required
Better current sharing when paralleling
Environmentally friendly
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