Infineon IPT Type N-Channel Power Transistor, 70 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R037CM8XTMA1

RS-stocknr.:: 349-258
Fabrikantnummer:: IPT60R037CM8XTMA1
Fabrikant:: Infineon

Infineon IPT Type N-Channel Power Transistor, 70 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R037CM8XTMA1

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RS-stocknr.:: 349-258
Fabrikantnummer:: IPT60R037CM8XTMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	Power Transistor
	Maximum Continuous Drain Current Id	70A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PG-HSOF-8
	Series	IPT
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	37mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	79nC
	Maximum Power Dissipation Pd	390W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC for Industrial Applications
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type Power Transistor
	Maximum Continuous Drain Current Id 70A
	Maximum Drain Source Voltage Vds 600V
	Package Type PG-HSOF-8
	Series IPT
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 37mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 79nC
	Maximum Power Dissipation Pd 390W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC for Industrial Applications
	Automotive Standard No

Datasheet - IPT60R037CM8XTMA1

Land van herkomst:: MY

Infineon IPT Series Power Transistor, 600V Maximum Drain Source Voltage, 70A Maximum Continuous Drain Current - IPT60R037CM8XTMA1

This power transistor is a high-voltage N-channel MOSFET designed for industrial switching and power conversion duties. It operates across a wide ambient range and is intended for surface-mounted assemblies where robust current handling and elevated voltage tolerance are required. The device is specified for industrial JEDEC applications and suits environments demanding high dissipation and dependable gate control.

Features and Benefits:

• 600V rating enables high-voltage switching applications
• 70A continuous drain current supports heavy load handling
• 37mΩ low Rds(on) reduces conduction losses
• 390W maximum power dissipation allows thermal headroom
• 79nC typical gate charge balances drive and switching speed
• ±20V gate tolerance simplifies gate-drive design

Applications

• Suitable for industrial motor-drive inverter stages
• Ideal for high-voltage power supplies and converters
• Used with bridge topologies in renewable-energy inverters
• Can be used for hard-switching industrial power modules
• Suitable for high-current DC-DC conversion stages

What temperature span can it withstand during operation?

It is specified to operate from -55°C up to 150°C, accommodating harsh thermal environments and elevated-case applications.

How is the device packaged for assembly?

It is supplied in an 8-pin PG-HSOF-8 surface-mount package intended for PCB reflow mounting and compact board layouts.

What gate and channel characteristics affect drive circuitry?

The N-channel enhancement device has a typical gate charge of 79nC and a maximum gate-to-source rating of 20V, informing gate-driver selection and protection margins.

How does the forward voltage influence switching performance?

A forward voltage of 0.9V contributes to rapid conduction turn-on behaviour and factors into overall conduction-loss calculations during device selection.