Infineon IPT Type N-Channel Power Transistor, 52 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IPT60R045CFD7XTMA1
- RS-stocknr.:
- 273-2797
- Fabrikantnummer:
- IPT60R045CFD7XTMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 2000 eenheden)*
€ 8.616,00
(excl. BTW)
€ 10.426,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 01 september 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2000 + | € 4,308 | € 8.616,00 |
*prijsindicatie
- RS-stocknr.:
- 273-2797
- Fabrikantnummer:
- IPT60R045CFD7XTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 272W | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC for Industrial Applications | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 272W | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC for Industrial Applications | ||
Automotive Standard No | ||
The Infineon MOSFET is a 600V CoolMOS CFD7 power transistor. The CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase shift full bridge and LLC. Resulting from reduced gate charge, best in class reverse recovery charge and improved turn off behaviour CoolMOSCFD7 offers highest efficiency in resonant topologies.
RoHS compliant
Low gate charge
Ultra fast body diode
Increased power density solutions
Excellent hard commutation ruggedness
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