Infineon IPW Type N-Channel Power Transistor, 123 A, 600 V Enhancement, 4-Pin PG-TO-247 IPW60R016CM8XKSA1

RS-stocknr.:: 349-265
Fabrikantnummer:: IPW60R016CM8XKSA1
Fabrikant:: Infineon

Infineon IPW Type N-Channel Power Transistor, 123 A, 600 V Enhancement, 4-Pin PG-TO-247 IPW60R016CM8XKSA1

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RS-stocknr.:: 349-265
Fabrikantnummer:: IPW60R016CM8XKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	Power Transistor
	Channel Type	Type N
	Maximum Continuous Drain Current Id	123A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PG-TO-247
	Series	IPW
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	16mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	521W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	171nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS, JEDEC
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type Power Transistor
	Channel Type Type N
	Maximum Continuous Drain Current Id 123A
	Maximum Drain Source Voltage Vds 600V
	Package Type PG-TO-247
	Series IPW
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 16mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 521W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 171nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS, JEDEC
	Automotive Standard No

Datasheet - IPW60R016CM8XKSA1

Land van herkomst:: CN

Infineon IPW Series Power Transistor, 600V Drain Source Voltage, 123A Continuous Drain Current - IPW60R016CM8XKSA1

This power transistor is a high-voltage, N-channel enhancement MOSFET designed for power conversion and switching tasks in demanding electrical systems. It is supplied in a through-hole PG-TO-247 package and intended for applications requiring substantial current handling and elevated temperature operation. The device complies with RoHS and JEDEC standards and is suitable where robust thermal tolerance is necessary.

Features and Benefits:

• 600V rating enables high-voltage switching applications
• 123A continuous current supports heavy-load operation
• 16 mΩ low Rds(on) reduces conduction losses
• 521W maximum dissipation allows significant power handling
• 171 nC gate charge facilitates predictable switching control
• -55 °C to 175 °C range permits high-temperature deployment

Applications

• Suitable for industrial motor-drive power stages
• Ideal for high-voltage power supplies and converters
• Used for inverter circuits requiring high current
• Can be used for switch-mode power
• Suitable for rugged through-hole mounting designs

What gate-drive considerations should be taken into account?

The typical total gate charge is 171 nC, so gate-driver capability and rise/fall control are important to manage switching losses and electromagnetic interference.

How does the device perform thermally under load?

It can dissipate up to 521 W

thermal management such as heatsinking and PCB layout should be designed to handle that dissipation at expected ambient temperatures.

What voltage and current limits must designers respect?

The component’s maximum drain-source voltage is 600V and the continuous drain current rating is 123 A, so system margins and transient conditions must be considered to avoid overstress.

Are there mounting or package-related implementation notes?

The PG-TO-247 through-hole format requires appropriate hole spacing and mechanical support and allows robust heatsink attachment for high-power use.