Infineon OptiMOS 5 N-Channel Power MOSFET, 55 A, 150 V Enhancement, 8-Pin PG-TDSON-8 BSC152N15LS5ATMA1
- RS-stocknr.:
- 349-398
- Fabrikantnummer:
- BSC152N15LS5ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 20,75
(excl. BTW)
€ 25,10
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 22 december 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 4,15 | € 20,75 |
| 50 - 95 | € 3,944 | € 19,72 |
| 100 - 495 | € 3,648 | € 18,24 |
| 500 - 995 | € 3,364 | € 16,82 |
| 1000 + | € 3,228 | € 16,14 |
*prijsindicatie
- RS-stocknr.:
- 349-398
- Fabrikantnummer:
- BSC152N15LS5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | OptiMOS 5 | |
| Package Type | PG-TDSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series OptiMOS 5 | ||
Package Type PG-TDSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
Infineon OptiMOS 5 Series Power MOSFET, 150V Drain Source Voltage, 55A Continuous Drain Current - BSC152N15LS5ATMA1
This power MOSFET is a high-voltage N-channel transistor designed for switch and power-conversion roles in surface-mount assemblies. It operates across a broad temperature range, enabling use in demanding environments, and is constructed to meet industry environmental standards while providing primary switching functionality for high-current applications.
Features and Benefits:
• 150V drain-source rating enables high-voltage switching
• 55A continuous current supports heavy-load operation
• 15.2mΩ Rds(on) reduces conduction losses under load
• 23nC typical gate charge allows fast gate transitions
• 96W power dissipation maintains thermal handling capability
• PG-TDSON-8 surface package facilitates compact PCB layouts
• 55A continuous current supports heavy-load operation
• 15.2mΩ Rds(on) reduces conduction losses under load
• 23nC typical gate charge allows fast gate transitions
• 96W power dissipation maintains thermal handling capability
• PG-TDSON-8 surface package facilitates compact PCB layouts
Applications
• Suitable for DC-DC converters in power supplies
• Ideal for synchronous rectification in converters
• Used with motor drivers for medium-power electric motors
• Can be used for battery management and charging systems
• Appropriate for general-purpose high-current switching
• Ideal for synchronous rectification in converters
• Used with motor drivers for medium-power electric motors
• Can be used for battery management and charging systems
• Appropriate for general-purpose high-current switching
What gate voltage limits should I observe for safe operation?
The gate-source voltage must not exceed 20V to avoid damaging the gate dielectric.
How does the component behave across temperature extremes?
It is specified to function between -55°C and 150°C, permitting operation in both cold-start and elevated-temperature conditions without derating the basic switching capability.
What mounting considerations apply for thermal performance?
As a PG-TDSON-8 surface-mount device, it requires adequate PCB copper and thermal vias to dissipate up to 96W under specified conditions.
Is the device suitable for automotive adoption?
It is not designated as automotive-grade, so use in vehicle systems should consider additional qualification steps.
Gerelateerde Links
- Infineon OptiMOS 5 Type N-Channel Power MOSFET 150 V Enhancement, 8-Pin PG-TDSON-8 BSC105N15LS5ATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7L014ATMA1
- Infineon OptiMOS 7 Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-TDSON-8-53 IAUCN08S7N013ATMA1
- Infineon OptiMOS 5 Type N-Channel Power MOSFET 150 V Enhancement, 8-Pin PG-TDSON-8 BSC088N15LS5ATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-61 IAUCN04S7L053DATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-33 IAUCN04S7L028ATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7N009ATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7N015ATMA1
