Infineon IPF N-Channel Power Transistor, 138 A, 200 V Enhancement, 7-Pin PG-TO263-7 IPF067N20NM6ATMA1
- RS-stocknr.:
- 349-407
- Fabrikantnummer:
- IPF067N20NM6ATMA1
- Fabrikant:
- Infineon
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€ 8,34
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€ 10,09
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|---|---|---|
| 1 - 9 | € 8,34 | - |
| 10 - 99 | € 7,51 | 9% |
| 100 - 499 | € 6,91 | 17% |
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| 1000 + | € 5,75 | 31% |
*prijsindicatie
- RS-stocknr.:
- 349-407
- Fabrikantnummer:
- IPF067N20NM6ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 138A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | PG-TO263-7 | |
| Series | IPF | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 6.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 300W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | 100% Avalanche Tested, IEC61249-2-21, MSL1 J-STD-020, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 138A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type PG-TO263-7 | ||
Series IPF | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 6.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 300W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals 100% Avalanche Tested, IEC61249-2-21, MSL1 J-STD-020, RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon OptiMOS 6 Power Transistor, 120 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), reducing conduction losses and improving overall efficiency. With an excellent gate charge x RDS(on) product (FOM), it offers superior switching performance. The device also has very low reverse recovery charge (Qrr), ensuring efficient operation.
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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