Infineon IGT65 Type N-Channel MOSFET, 13 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R140D2ATMA1

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RS-stocknr.:
351-965
Fabrikantnummer:
IGT65R140D2ATMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

650V

Package Type

PG-HSOF-8

Series

IGT65

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.17Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

1.8nC

Maximum Power Dissipation Pd

47W

Maximum Gate Source Voltage Vgs

10 V

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC for Industrial Applications

Automotive Standard

No

Land van herkomst:
MY
The Infineon CoolGaN is a highly efficient gallium nitride (GaN) transistor designed for power conversion. It enables higher power density, supports reduced system BOM cost, and facilitates miniaturized form factors. Produced using wafer technology and fully automated production lines, it features narrow production tolerances and the highest product quality. This makes it suitable for a wide range of applications, from consumer electronics to industrial applications.

Enhancement mode transistor

Ultra fast switching

No reverse recovery charge

Capable of reverse conduction

Low gate and output charge

Superior commutation ruggedness

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