Infineon IGT65 Type N-Channel MOSFET, 31 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R055D2ATMA1
- RS-stocknr.:
- 351-966
- Fabrikantnummer:
- IGT65R055D2ATMA1
- Fabrikant:
- Infineon
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€ 7,62
(excl. BTW)
€ 9,22
(incl. BTW)
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 7,62 |
| 10 - 99 | € 6,86 |
| 100 - 499 | € 6,32 |
| 500 - 999 | € 5,87 |
| 1000 + | € 5,26 |
*prijsindicatie
- RS-stocknr.:
- 351-966
- Fabrikantnummer:
- IGT65R055D2ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IGT65 | |
| Package Type | PG-HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.066Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 106W | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Maximum Gate Source Voltage Vgs | -10 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC for Industrial Applications | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IGT65 | ||
Package Type PG-HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.066Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 106W | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Maximum Gate Source Voltage Vgs -10 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC for Industrial Applications | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon CoolGaN is a highly efficient gallium nitride (GaN) transistor designed for power conversion. It enables higher power density, supports reduced system BOM cost, and facilitates miniaturized form factors. Produced using wafer technology and fully automated production lines, it features narrow production tolerances and the highest product quality. This makes it suitable for a wide range of applications, from consumer electronics to industrial applications.
Enhancement mode transistor
Ultra fast switching
No reverse recovery charge
Capable of reverse conduction
Low gate and output charge
Superior commutation ruggedness
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