Infineon IGT65 Type N-Channel MOSFET, 38 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R045D2ATMA1
- RS-stocknr.:
- 351-968
- Fabrikantnummer:
- IGT65R045D2ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 9,65
(excl. BTW)
€ 11,68
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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- Verzending vanaf 12 mei 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 9,65 |
| 10 - 99 | € 8,69 |
| 100 - 499 | € 8,01 |
| 500 - 999 | € 7,43 |
| 1000 + | € 6,66 |
*prijsindicatie
- RS-stocknr.:
- 351-968
- Fabrikantnummer:
- IGT65R045D2ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-HSOF-8 | |
| Series | IGT65 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.054Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Maximum Power Dissipation Pd | 131W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-HSOF-8 | ||
Series IGT65 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.054Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Maximum Power Dissipation Pd 131W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon CoolGaN is a highly efficient gallium nitride (GaN) transistor designed for power conversion. It enables higher power density, supports reduced system BOM cost, and facilitates miniaturized form factors. Produced using wafer technology and fully automated production lines, it features narrow production tolerances and the highest product quality. This makes it suitable for a wide range of applications, from consumer electronics to industrial applications.
Enhancement mode transistor
Ultra fast switching
No reverse recovery charge
Capable of reverse conduction
Low gate and output charge
Superior commutation ruggedness
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