Infineon IGC033 Type P-Channel MOSFET, 76 A, 100 V Enhancement, 6-Pin PG-VSON-6 IGC033S101XTMA1
- RS-stocknr.:
- 351-970
- Fabrikantnummer:
- IGC033S101XTMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 6,71
(excl. BTW)
€ 8,12
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 3,355 | € 6,71 |
| 20 - 198 | € 3,025 | € 6,05 |
| 200 - 998 | € 2,785 | € 5,57 |
| 1000 - 1998 | € 2,585 | € 5,17 |
| 2000 + | € 2,315 | € 4,63 |
*prijsindicatie
- RS-stocknr.:
- 351-970
- Fabrikantnummer:
- IGC033S101XTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IGC033 | |
| Package Type | PG-VSON-6 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 45W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IGC033 | ||
Package Type PG-VSON-6 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 45W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon CoolGaN Transistor is a normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.
Best in class power density
Highest efficiency
Improved thermal management
Enabling smaller and lighter designs
Excellent reliability
Lowering BOM cost
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