Infineon IGC033 Type P-Channel MOSFET, 76 A, 100 V Enhancement, 6-Pin PG-VSON-6 IGC033S10S1XTMA1

RS-stocknr.:: 351-971
Fabrikantnummer:: IGC033S10S1XTMA1
Fabrikant:: Infineon

Infineon IGC033 Type P-Channel MOSFET, 76 A, 100 V Enhancement, 6-Pin PG-VSON-6 IGC033S10S1XTMA1

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 verpakking van 2 eenheden)*

€ 8,30

(excl. BTW)

€ 10,04

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

4.860 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
2 - 18	€ 4,15	€ 8,30
20 - 198	€ 3,745	€ 7,49
200 - 998	€ 3,445	€ 6,89
1000 - 1998	€ 3,205	€ 6,41
2000 +	€ 2,87	€ 5,74

*prijsindicatie

RS-stocknr.:: 351-971
Fabrikantnummer:: IGC033S10S1XTMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	76A
	Maximum Drain Source Voltage Vds	100V
	Package Type	PG-VSON-6
	Series	IGC033
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	3.3mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	11nC
	Minimum Operating Temperature	-40°C
	Maximum Power Dissipation Pd	45W
	Maximum Gate Source Voltage Vgs	5.5V
	Maximum Operating Temperature	150°C
	Width	3.1mm
	Standards/Approvals	JEDEC
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 76A
	Maximum Drain Source Voltage Vds 100V
	Package Type PG-VSON-6
	Series IGC033
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 3.3mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 11nC
	Minimum Operating Temperature -40°C
	Maximum Power Dissipation Pd 45W
	Maximum Gate Source Voltage Vgs 5.5V
	Maximum Operating Temperature 150°C
	Width 3.1mm
	Standards/Approvals JEDEC
	Automotive Standard No

Datasheet - IGC033S10S1XTMA1

Land van herkomst:: MY

Infineon IGC033 Series MOSFET, 100V Drain Source Voltage, 76A Continuous Drain Current - IGC033S10S1XTMA1

This MOSFET is a P-channel enhancement device designed for high-current switching in surface-mounted electronics. It operates across a wide temperature range and is suited to demanding thermal environments while providing low-resistance conduction for power management and conversion tasks.

Features and Benefits:

• 3.3mΩ drain-source resistance for minimal conduction loss
• 76A continuous drain current enabling heavy-load switching
• 100V drain-source rating for high-voltage applications
• 11nC typical gate charge for faster switching transitions
• 45W maximum power dissipation supporting elevated loads
• 5.5V maximum gate-source tolerance for low-voltage drive compatibility

Applications

• Suitable for synchronous buck converters in power supplies
• Ideal for motor driver stages requiring high current
• Used for high-voltage load switching in industrial systems
• Can be used for server and telecoms power distribution
• Appropriate for compact surface-mount power modules

What package type should I plan for on my board?

It is supplied in a PG-VSON-6 surface-mount package requiring a six-pin footprint and thermal pad considerations to dissipate heat.

How does temperature range affect deployment choices?

With an operating range from -40 to 150°C it can be placed in environments with wide thermal variation, though layout must ensure sufficient thermal conduction to stay within dissipation limits.

What gate-drive levels are acceptable for switching?

Drive voltages must not exceed 5.5V between gate and source

typical low-voltage gate-drive circuits are appropriate given the modest gate charge.

Are there specific considerations for power dissipation management?

The 45W maximum requires adequate copper area or heatsinking on the PCB and consideration of duty cycle to prevent junction overheating.