Starpower DOSEMI Single Switch-Channel SiC Mosfet without Diode, 37 A, 1.2 kV Enhancement, 4-Pin Tape & Reel
- RS-stocknr.:
- 427-759
- Fabrikantnummer:
- DM800S12TDRB
- Fabrikant:
- Starpower
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 7,17
(excl. BTW)
€ 8,68
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 7,17 |
| 10 - 99 | € 6,45 |
| 100 - 499 | € 5,94 |
| 500 - 999 | € 5,52 |
| 1000 + | € 4,49 |
*prijsindicatie
- RS-stocknr.:
- 427-759
- Fabrikantnummer:
- DM800S12TDRB
- Fabrikant:
- Starpower
Specificaties
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Starpower | |
| Channel Type | Single Switch | |
| Product Type | SiC Mosfet without Diode | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | Tape & Reel | |
| Series | DOSEMI | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 105mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 162W | |
| Forward Voltage Vf | 4.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Starpower | ||
Channel Type Single Switch | ||
Product Type SiC Mosfet without Diode | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type Tape & Reel | ||
Series DOSEMI | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 105mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 162W | ||
Forward Voltage Vf 4.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Starpower MOSFET Power Discrete provides ultralow conduction loss as well as low switching loss. They are designed for the applications such as hybrid and electric vehicle.
SiC power MOSFET
Low RDS(on)
Low inductance case avoid oscillations
ROHS
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