Starpower DOSEMI Single Switch-Channel SiC Mosfet without Diode, 118 A, 1.2 kV Enhancement, 4-Pin Tape & Reel
- RS-stocknr.:
- 427-760
- Fabrikantnummer:
- DM170S12TDRB
- Fabrikant:
- Starpower
Ontvang bulkkorting
Voeg 10 meer toe om € 20,40 te besparen
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 20,34
(excl. BTW)
€ 24,61
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
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Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Bespaar |
|---|---|---|
| 1 - 9 | € 20,34 | - |
| 10 - 99 | € 18,30 | € 20,40 |
| 100 + | € 16,88 | € 346,00 |
*prijsindicatie
- RS-stocknr.:
- 427-760
- Fabrikantnummer:
- DM170S12TDRB
- Fabrikant:
- Starpower
Specificaties
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Starpower | |
| Product Type | SiC Mosfet without Diode | |
| Channel Type | Single Switch | |
| Maximum Continuous Drain Current Id | 118A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | DOSEMI | |
| Package Type | Tape & Reel | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 29.0mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 3.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 19V | |
| Maximum Power Dissipation Pd | 355W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Starpower | ||
Product Type SiC Mosfet without Diode | ||
Channel Type Single Switch | ||
Maximum Continuous Drain Current Id 118A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series DOSEMI | ||
Package Type Tape & Reel | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 29.0mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 3.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 19V | ||
Maximum Power Dissipation Pd 355W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Starpower MOSFET Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as hybrid and electric vehicle.
SiC power MOSFET
Low RDS(on)
Chip sintering technology
Low inductance case avoid oscillations
ROHS
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