onsemi NTD2955 Type P-Channel MOSFET, 12 A, 60 V Enhancement, 3-Pin TO-252 NTD2955T4G
- RS-stocknr.:
- 463-038
- Fabrikantnummer:
- NTD2955T4G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 10 eenheden)*
€ 9,36
(excl. BTW)
€ 11,33
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 50 stuk(s) vanaf 31 augustus 2026
- Plus verzending 260 stuk(s) vanaf 31 augustus 2026
- Plus verzending 2.360 stuk(s) vanaf 07 september 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,936 | € 9,36 |
| 100 - 240 | € 0,806 | € 8,06 |
| 250 - 490 | € 0,70 | € 7,00 |
| 500 - 990 | € 0,614 | € 6,14 |
| 1000 + | € 0,559 | € 5,59 |
*prijsindicatie
- RS-stocknr.:
- 463-038
- Fabrikantnummer:
- NTD2955T4G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | NTD2955 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Power Dissipation Pd | 55W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.25V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 6.22mm | |
| Height | 2.38mm | |
| Length | 6.73mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series NTD2955 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Power Dissipation Pd 55W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.25V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 6.22mm | ||
Height 2.38mm | ||
Length 6.73mm | ||
Automotive Standard AEC-Q101 | ||
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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