Infineon HEXFET N-Channel MOSFET, 85 A, 150 V Enhancement, 3-Pin TO-220 IRFB4321PBF

RS-stocknr.:: 495-568
Fabrikantnummer:: IRFB4321PBF
Fabrikant:: Infineon

Infineon HEXFET N-Channel MOSFET, 85 A, 150 V Enhancement, 3-Pin TO-220 IRFB4321PBF

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RS-stocknr.:: 495-568
Fabrikantnummer:: IRFB4321PBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	85A
	Maximum Drain Source Voltage Vds	150V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	15mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	71nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	350W
	Maximum Gate Source Voltage Vgs	-30V, +30V
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Length	10.66mm
	Width	4.82mm
	Height	9.02mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 85A
	Maximum Drain Source Voltage Vds 150V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 15mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 71nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 350W
	Maximum Gate Source Voltage Vgs -30V, +30V
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Length 10.66mm
	Width 4.82mm
	Height 9.02mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 150V Maximum Drain-Source Voltage, 85A Maximum Continuous Drain Current - IRFB4321PBF

This MOSFET is a through‑hole power transistor designed for high‑current switching in demanding environments. It is an N‑channel enhancement device supplied in a TO‑220 package for straightforward PCB mounting. The component supports wide operating temperatures suited to industrial contexts and conforms to RoHS.

Features and Benefits:

• 350W maximum power dissipation enables heavy‑load handling
• 15mΩ Rds(on) minimises conduction losses
• 71 nC typical gate charge supports Rapid switching control
• 30V maximum gate-source voltage allows robust gate drive
• -55°C to 175°C operating range sustains harsh environments

Applications

• Suitable for high‑current power‑supply output stages
• Ideal for motor‑drive switching elements
• Used with heatsinked regulators in industrial systems
• Can be used for DC-DC converter switching
• Suitable for through‑hole replacement in legacy boards

What mounting method does it use?

It is supplied in a TO‑220 package intended for through‑hole mounting and heatsinking.

What kind of channel and switching mode does it use?

The device is an N‑channel, enhancement‑mode transistor designed for fast switching in power circuits.

What are the limits for gate and drain voltages?

The gate may be driven up to 30V and the drain-source voltage can reach 150V.

How much continuous current can it handle and what is the thermal capacity?

It supports 85A continuous drain current with a maximum power dissipation of 350W.

Are there environmental or approval considerations for use?

The component meets RoHS requirements and operates across a temperature span from -55°C to 175°C.