ROHM R4P Type N-Channel Single MOSFETs, 30 V Enhancement, 3-Pin MPT3 R4P030N03HZGT100
- RS-stocknr.:
- 646-552
- Fabrikantnummer:
- R4P030N03HZGT100
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 10 eenheden)*
€ 3,49
(excl. BTW)
€ 4,22
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 02 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 0,349 | € 3,49 |
| 100 - 240 | € 0,306 | € 3,06 |
| 250 - 990 | € 0,276 | € 2,76 |
| 1000 - 4990 | € 0,223 | € 2,23 |
| 5000 + | € 0,217 | € 2,17 |
*prijsindicatie
- RS-stocknr.:
- 646-552
- Fabrikantnummer:
- R4P030N03HZGT100
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | R4P | |
| Package Type | MPT3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.5nC | |
| Maximum Power Dissipation Pd | 0.5W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 4.30mm | |
| Height | 1.6mm | |
| Width | 4.70 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 30V | ||
Series R4P | ||
Package Type MPT3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.5nC | ||
Maximum Power Dissipation Pd 0.5W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 4.30mm | ||
Height 1.6mm | ||
Width 4.70 mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM 4 volt drive N channel metal oxide semiconductor field effect transistor features low on resistance and supports 4 volt drive operation.
AEC-Q101 Qualified
Gerelateerde Links
- ROHM R4P N-Channel MOSFET 60 V, 3-Pin MPT3 R4P020N06HZGT100
- ROHM R2P N-Channel MOSFET 60 V, 3-Pin MPT3 R2P020N06HZGT100
- ROHM N-Channel MOSFET 30 V, 3-Pin SOT-346 RQ5E030AJTCL
- ROHM N-Channel MOSFET 30 V, 3-Pin TUMT RSF014N03TL
- ROHM N-Channel MOSFET 30 V, 3-Pin TSMT RSR025N03TL
- ROHM N-Channel MOSFET 30 V, 3-Pin TSMT RTR025N03TL
- ROHM RQ5E025SN N-Channel MOSFET 30 V, 3-Pin TSMT-3 RQ5E025SNTL
- ROHM RV7 N-Channel MOSFET 30 V, 3-Pin DFN1212-3 RV7E040AJTCR1
