Vishay SI2122DS Type N-Channel Single MOSFETs, 2.17 A, 100 V Enhancement, 3-Pin PowerPAK SI2122DS-T1-GE3
- RS-stocknr.:
- 653-085
- Fabrikantnummer:
- SI2122DS-T1-GE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 552,00
(excl. BTW)
€ 669,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 6.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,184 | € 552,00 |
*prijsindicatie
- RS-stocknr.:
- 653-085
- Fabrikantnummer:
- SI2122DS-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 2.17A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK | |
| Series | SI2122DS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.160Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 2.17A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK | ||
Series SI2122DS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.160Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay N-channel MOSFET designed for compact, high-efficiency switching in low-power applications. It supports up to 100 V drain-source voltage. Packaged in a SOT-23 format, it utilizes TrenchFET Gen IV technology for low RDS(on), fast switching, and efficient thermal performance in space-constrained designs.
Pb Free
Halogen free
RoHS compliant
Used in LED backlighting
Gerelateerde Links
- Vishay SI2122DS Type N-Channel Single MOSFETs 100 V Enhancement, 3-Pin PowerPAK
- Vishay SIRA18DDP Type N-Channel Single MOSFETs 30 V Enhancement, 8-Pin PowerPAK SIRA18DDP-T1-GE3
- Vishay SISS5812DN Type N-Channel Single MOSFETs 80 V Enhancement, 8-Pin PowerPAK SISS5812DN-T1-GE3
- Vishay SIS9122 Dual N-Channel Single MOSFETs 100 V Enhancement, 8-Pin PowerPAK SIS9122DN-T1-GE3
- Vishay SIS5712DN Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK SIS5712DN-T1-GE3
- Vishay SIB4122DK Type N-Channel Single MOSFETs 100 V Enhancement, 7-Pin PowerPAK SIB4122DK-T1-GE3
- Vishay SIHM080N60E Type N-Channel Single MOSFETs 600 V Enhancement, 4-Pin PowerPAK SIHM080N60E-T1-GE3
- Vishay SI3122DV Type N-Channel Single MOSFETs 100 V Enhancement, 6-Pin PowerPAK SI3122DV-T1-GE3