Vishay SI8818EDB Type N-Channel Single MOSFETs, 2.2 A, 30 V Enhancement, 4-Pin PowerPAK SI8818EDB-T2-E1
- RS-stocknr.:
- 653-090
- Fabrikantnummer:
- SI8818EDB-T2-E1
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 390,00
(excl. BTW)
€ 480,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Laatste voorraad RS
- Laatste 3.000 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,13 | € 390,00 |
*prijsindicatie
- RS-stocknr.:
- 653-090
- Fabrikantnummer:
- SI8818EDB-T2-E1
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 2.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SI8818EDB | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.143Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 0.9W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.4nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.39mm | |
| Length | 0.8mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 2.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SI8818EDB | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.143Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 0.9W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.4nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.39mm | ||
Length 0.8mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay N-channel MOSFET designed for ultra-compact, high-efficiency switching in space-constrained systems. It supports up to 30 V drain-source voltage. Packaged in MICRO FOOT 0.8 mm x 0.8 mm, it utilizes TrenchFET technology to deliver low RDS(on), fast switching, and excellent thermal performance.
Pb Free
Halogen free
RoHS compliant
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