Vishay SIR4411DP Type P-Channel Single MOSFETs, -48.3 A, -40 V Enhancement, 8-Pin PowerPAK SIR4411DP-T1-GE3
- RS-stocknr.:
- 653-192
- Fabrikantnummer:
- SIR4411DP-T1-GE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 1.701,00
(excl. BTW)
€ 2.058,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 3.000 stuk(s) vanaf 20 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,567 | € 1.701,00 |
*prijsindicatie
- RS-stocknr.:
- 653-192
- Fabrikantnummer:
- SIR4411DP-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -48.3A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Series | SIR4411DP | |
| Package Type | PowerPAK | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.011Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 56.8W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 36.5nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.61mm | |
| Length | 5.15mm | |
| Width | 6.25 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -48.3A | ||
Maximum Drain Source Voltage Vds -40V | ||
Series SIR4411DP | ||
Package Type PowerPAK | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.011Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 56.8W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 36.5nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.61mm | ||
Length 5.15mm | ||
Width 6.25 mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay TrenchFET Gen IV P-Channel Power MOSFET rated for 40 V drain-source voltage. It features low RDS(on) and fast switching performance, making it suitable for high-efficiency power management. Packaged in a Compact PowerPAK SO-8, it's Ideal for DC/DC converters, load switching, and battery management in space-constrained designs.
Pb Free
Halogen free
RoHS compliant
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