Vishay SiSS73DN Type P-Channel MOSFET, 16.2 A, 150 V Enhancement, 8-Pin PowerPAK 1212 SISS73DN-T1-GE3
- RS-stocknr.:
- 188-4940
- Fabrikantnummer:
- SISS73DN-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 11,53
(excl. BTW)
€ 13,95
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Wordt opgeheven
- Laatste 10.280 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 1,153 | € 11,53 |
| 100 - 240 | € 1,096 | € 10,96 |
| 250 - 490 | € 0,923 | € 9,23 |
| 500 - 990 | € 0,75 | € 7,50 |
| 1000 + | € 0,577 | € 5,77 |
*prijsindicatie
- RS-stocknr.:
- 188-4940
- Fabrikantnummer:
- SISS73DN-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16.2A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PowerPAK 1212 | |
| Series | SiSS73DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 14.6nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 65.8W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.78mm | |
| Length | 3.3mm | |
| Width | 3.3 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-38-852 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16.2A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PowerPAK 1212 | ||
Series SiSS73DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 14.6nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 65.8W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.78mm | ||
Length 3.3mm | ||
Width 3.3 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Distrelec Product Id 304-38-852 | ||
P-Channel 150 V (D-S) MOSFET.
TrenchFET® with ThunderFET technology
Very low RDS(on) minimizes power loss from conduction
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