ROHM RF9P120BKFRA Type N-Channel Single MOSFETs, 100 V Enhancement, 6-Pin DFN2020Y7LSAA RF9P120BKFRATCR

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  • Verzending vanaf 21 januari 2026
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1000 +€ 0,90€ 1,80

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Verpakkingsopties
RS-stocknr.:
687-387
Fabrikantnummer:
RF9P120BKFRATCR
Fabrikant:
ROHM
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Merk

ROHM

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Drain Source Voltage Vds

100V

Series

RF9P120BKFRA

Package Type

DFN2020Y7LSAA

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

58mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

6.9nC

Maximum Power Dissipation Pd

23W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Length

2.1mm

Width

2.1 mm

Height

0.65mm

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Land van herkomst:
JP
The ROHM N channel power MOSFET designed for efficient switching in various applications including automotive, lighting, and body electronics. Engineered to support a robust continuous drain current of ±12A and a maximum Drain-Source voltage of 100V, this component excels in environments demanding reliability and efficiency. Its advanced design features low on-resistance and high power density, ensuring optimal performance while complying with AEC-Q101 standards and RoHS regulations. The compact DFN2020Y7LSAA package further allows easy integration into space-constrained designs, making it a versatile choice for modern electronic solutions.

AEC Q101 qualified for automotive applications, ensuring reliability

Low on resistance (RDS(on)), enhancing efficiency during operation

Supports a Drain-Source voltage of 100V suitable for high-voltage applications

Continuous drain current of ±12A, capable of handling demanding loads

Disposes of Pb free plating, ensuring compliance with environmental standards

Halogen free, contributing to eco-friendly product design

High power density with a maximum power dissipation of 23W, optimising thermal performance

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