Vishay SF Series N channel-Channel MOSFET, 33 A, 650 V Enhancement, 3-Pin TO-220AB SIHP110N65SF-GE3
- RS-stocknr.:
- 735-263
- Fabrikantnummer:
- SIHP110N65SF-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 4,36
(excl. BTW)
€ 5,28
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 03 augustus 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 4,36 |
| 10 - 49 | € 2,70 |
| 50 - 99 | € 2,09 |
| 100 + | € 1,42 |
*prijsindicatie
- RS-stocknr.:
- 735-263
- Fabrikantnummer:
- SIHP110N65SF-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220AB | |
| Series | SF Series | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.115Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 83nC | |
| Maximum Power Dissipation Pd | 313W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220AB | ||
Series SF Series | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.115Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 83nC | ||
Maximum Power Dissipation Pd 313W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- Land van herkomst:
- IL
The Vishay Power MOSFET is designed for efficient energy handling in Advanced electronic systems. with low effective capacitance, it minimizes switching and conduction losses, ensuring improved performance and reliability. its avalanche energy rating and eco-friendly compliance make it a robust and sustainable choice for modern applications.
Reduces switching and conduction losses for better performance
Offers avalanche energy rating for durability
Ensures low figure of merit for optimized design
Maintains RoHS compliance for environmental standards
Delivers halogen-free construction for safer usage
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