Vishay EF Type N-Channel MOSFET, 18 A, 650 V Enhancement, 3-Pin TO-220
- RS-stocknr.:
- 200-6819
- Fabrikantnummer:
- SIHP186N60EF-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 10 eenheden)*
€ 26,76
(excl. BTW)
€ 32,38
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 980 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 10 | € 2,676 | € 26,76 |
| 20 - 40 | € 2,515 | € 25,15 |
| 50 - 90 | € 2,275 | € 22,75 |
| 100 - 240 | € 2,141 | € 21,41 |
| 250 + | € 2,008 | € 20,08 |
*prijsindicatie
- RS-stocknr.:
- 200-6819
- Fabrikantnummer:
- SIHP186N60EF-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | EF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 193mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Power Dissipation Pd | 156W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 14.4mm | |
| Length | 10.52mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series EF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 193mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Power Dissipation Pd 156W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 14.4mm | ||
Length 10.52mm | ||
Automotive Standard No | ||
The Vishay SIHP186N60EF-GE3 is a EF series power MOSFET with fast body diode.
4th generation E series technology
Low figure-of-merit
Low effective capacitance
Reduced switching and conduction losses
Avalanche energy rated (UIS)
Gerelateerde Links
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SIHP186N60EF-GE3
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SiHP105N60EF-GE3
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SIHP125N60EF-GE3
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 SiHA186N60EF-GE3