Vishay EF Type N-Channel Power MOSFET, 29 A, 650 V Enhancement, 3-Pin TO-220AB SiHP105N60EF-GE3

RS-stocknr.:: 200-6794
Fabrikantnummer:: SiHP105N60EF-GE3
Fabrikant:: Vishay

Vishay EF Type N-Channel Power MOSFET, 29 A, 650 V Enhancement, 3-Pin TO-220AB SiHP105N60EF-GE3

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RS-stocknr.:: 200-6794
Fabrikantnummer:: SiHP105N60EF-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	29A
	Maximum Drain Source Voltage Vds	650V
	Series	EF
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	88mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	53nC
	Maximum Power Dissipation Pd	208W
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Length	10.52mm
	Width	4.65mm
	Height	14.4mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 29A
	Maximum Drain Source Voltage Vds 650V
	Series EF
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 88mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 53nC
	Maximum Power Dissipation Pd 208W
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Length 10.52mm
	Width 4.65mm
	Height 14.4mm
	Standards/Approvals RoHS
	Automotive Standard No

Document- SiHP105N60EF-GE3

Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 29A Continuous Drain Current - SiHP105N60EF-GE3

This power MOSFET is a high-voltage switching device designed for demanding power-conversion and control roles in industrial and electronic systems. It is an N-channel enhancement-mode transistor supplied in a through-hole TO-220AB package, intended to handle elevated voltages and sustained currents while operating across a wide temperature span.

Features and Benefits:

• 650V drain rating enables high-voltage switching applications
• 29A continuous drain capability supports substantial load currents
• 208W maximum dissipation allows high-power handling
• 88mΩ Rds(on) minimises conduction losses at rated conditions
• 53nC typical gate charge optimises switching energy and drive requirements
• 30V gate tolerance permits robust gate-drive margins

Applications

• Suitable for SMPS primary-side switching stages
• Ideal for industrial motor-drive inverter sections
• Used for high-voltage DC-DC converters in power supplies
• Can be used for electronic load and power-test equipment
• Used with discrete switch topologies in power factor correction

What thermal extremes can it withstand in operation?

The device is specified to operate from -55°C up to 150°C, permitting use in both cold-start environments and elevated-temperature installations.

How is it mounted and integrated into a PCB design?

It uses a through-hole TO-220AB package with three pins and a mounting tab for heatsinking, allowing straightforward board fixation and thermal management via a heatsink attached to the tab.

What gate-drive considerations should be observed?

The maximum gate-to-source rating is 30V

gate-drive voltages should be kept within this limit and matched to the 53nC typical gate charge to ensure efficient switching without overstressing the gate.

What forward voltage characteristic is relevant during conduction?

The forward voltage is 1.2V, which informs conduction-loss calculations in low-voltage current paths and body-diode performance assessments.