Vishay EF Type N-Channel Power MOSFET, 29 A, 650 V Enhancement, 3-Pin TO-220AB SiHP105N60EF-GE3

RS-stocknr.:: 200-6794
Fabrikantnummer:: SiHP105N60EF-GE3
Fabrikant:: Vishay

Vishay EF Type N-Channel Power MOSFET, 29 A, 650 V Enhancement, 3-Pin TO-220AB SiHP105N60EF-GE3

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RS-stocknr.:: 200-6794
Fabrikantnummer:: SiHP105N60EF-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	29A
	Maximum Drain Source Voltage Vds	650V
	Series	EF
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	88mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	53nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	208W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Width	4.65mm
	Standards/Approvals	RoHS
	Length	10.52mm
	Height	14.4mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 29A
	Maximum Drain Source Voltage Vds 650V
	Series EF
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 88mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 53nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 208W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Width 4.65mm
	Standards/Approvals RoHS
	Length 10.52mm
	Height 14.4mm
	Automotive Standard No

Document- SiHP105N60EF-GE3

Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 29A Continuous Drain Current - SiHP105N60EF-GE3

This power MOSFET is a high-voltage N-channel enhancement device intended for power-switching roles in industrial and electronic systems. It is designed for through-hole mounting in applications that demand substantial blocking voltage, steady current capability and robust thermal margin, offering a practical solution for high-voltage circuitry.

Features and Benefits:

• 650V rating enables use in high-voltage switching systems
• 29A continuous drain current supports substantial load currents
• 88mΩ on-resistance reduces conduction losses
• 53nC typical gate charge allows predictable switching energy
• 208W power dissipation capacity improves thermal handling
• 150°C maximum operating temperature tolerates elevated junctions

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor drive switching stages
• Used for audio power amplifiers requiring high Vds margin
• Can be used for inverter front-end switches in machinery
• Used with discrete-level gate drivers in automation systems

What gate-drive limits should be observed for reliable operation?

The device tolerates gate-source voltages up to 30V

stay within this limit to avoid degrading gate insulation and ensure expected switching behaviour.

How should thermal management be approached on a through-hole layout?

Utilise a suitably rated heatsink attached to the TO-220AB package tab and ensure sufficient airflow to maintain junction temperatures below the 150°C maximum under expected dissipation.

What switching trade-offs arise from the typical gate charge value?

A 53nC gate charge balances switching speed and driver demand

drivers must supply sufficient Peak current to achieve the desired rise and fall times without excessive switching losses.

Can this component be mounted on legacy assemblies that require discrete components?

Yes, its through-hole format and three-pin configuration are compatible with traditional board designs and manual assembly processes.