Infineon IQF Type N-Channel Power Transistor, 451 A, 40 V Enhancement, 12-Pin PG-TSON-12 IQFH55N04NM6ATMA1
- RS-stocknr.:
- 349-390
- Fabrikantnummer:
- IQFH55N04NM6ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 9,43
(excl. BTW)
€ 11,41
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 4,715 | € 9,43 |
| 20 - 198 | € 4,24 | € 8,48 |
| 200 - 998 | € 3,91 | € 7,82 |
| 1000 - 1998 | € 3,63 | € 7,26 |
| 2000 + | € 3,25 | € 6,50 |
*prijsindicatie
- RS-stocknr.:
- 349-390
- Fabrikantnummer:
- IQFH55N04NM6ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 451A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PG-TSON-12 | |
| Series | IQF | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.55mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 214W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 118nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 451A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PG-TSON-12 | ||
Series IQF | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.55mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 214W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 118nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon OptiMOS 6 Power Transistor, 40 V is specifically optimized for low voltage drive applications and battery powered systems, making it ideal for energy efficient designs. It is also optimized for synchronous applications, ensuring enhanced performance. The MOSFET features very low on-resistance (RDS(on)), minimizing conduction losses for improved efficiency. Additionally, it is 100% avalanche tested, ensuring reliable performance under demanding conditions.
Superior thermal resistance
N channel
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
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