ROHM P-Channel MOSFET, 40 A, -30 V, 8-Pin DFN3333T8LSAB RH7E04BBJFRATCB
- RS-stocknr.:
- 780-657
- Fabrikantnummer:
- RH7E04BBJFRATCB
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
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€ 4,80
(excl. BTW)
€ 5,80
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Nieuw product (vandaag reserveren)
- Verzending vanaf 26 juni 2026
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Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5 - 45 | € 0,96 | € 4,80 |
| 50 - 245 | € 0,844 | € 4,22 |
| 250 + | € 0,682 | € 3,41 |
*prijsindicatie
- RS-stocknr.:
- 780-657
- Fabrikantnummer:
- RH7E04BBJFRATCB
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | P-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | DFN3333T8LSAB | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.3Ω | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Power Dissipation Pd | 75W | |
| Maximum Gate Source Voltage Vgs | -10V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.1mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 3.4mm | |
| Length | 3.4mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type P-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type DFN3333T8LSAB | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.3Ω | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Power Dissipation Pd 75W | ||
Maximum Gate Source Voltage Vgs -10V | ||
Maximum Operating Temperature 175°C | ||
Height 1.1mm | ||
Standards/Approvals RoHS Compliant | ||
Width 3.4mm | ||
Length 3.4mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM Power MOSFET delivers high-reliability P-channel switching for Advanced automotive and industrial power management. This robust device is engineered for ADAS and body control modules, ensuring efficient performance in high-temperature environments.
Drain-source voltage of -30 V
Continuous drain current of -40 A
7.5 mOhm typical on-resistance at -10 V
High power dissipation of 75 W
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