Infineon IMBF1 N-Channel MOSFET, 5.2 A, 1.7 kV Enhancement, 7-Pin TO-263 IMBF170R1K0M1XTMA1

RS-stocknr.:: 222-4847
Fabrikantnummer:: IMBF170R1K0M1XTMA1
Fabrikant:: Infineon

Infineon IMBF1 N-Channel MOSFET, 5.2 A, 1.7 kV Enhancement, 7-Pin TO-263 IMBF170R1K0M1XTMA1

Subtotaal (1000 eenheden, op een rol van 1000)*

€ 1.884,00

(excl. BTW)

€ 2.280,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 02 december 2027

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
1000 +	€ 1,884	€ 1.884,00

*prijsindicatie

RS-stocknr.:: 222-4847
Fabrikantnummer:: IMBF170R1K0M1XTMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	5.2A
	Maximum Drain Source Voltage Vds	1.7kV
	Package Type	TO-263
	Series	IMBF1
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	1Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	23V
	Maximum Power Dissipation Pd	68W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	+175°C
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 5.2A
	Maximum Drain Source Voltage Vds 1.7kV
	Package Type TO-263
	Series IMBF1
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 1Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 23V
	Maximum Power Dissipation Pd 68W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature +175°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IMBF170R1K0M1XTMA1

Infineon IMBF1 Series MOSFET, 1700V Drain Source Voltage, 68W Power Dissipation - IMBF170R1K0M1XTMA1

This MOSFET is a high-voltage semiconductor device designed to control and switch power in surface-mounted assemblies. It operates as an N-channel enhancement-mode transistor, providing controlled conduction between drain and source for power-management applications across a wide temperature range.

Features and Benefits:

• 1700V rating enables operation in high-voltage circuits
• 5.2A continuous current supports moderate load currents
• 68W power dissipation allows sustained thermal handling
• 1Ω drain-source resistance limits conduction losses
• 23V gate tolerance permits substantial gate-drive voltage
• Surface-mount TO-263 package simplifies board assembly

Applications

• Suitable for high-voltage switching in industrial supplies
• Ideal for power-conversion stages requiring sustained dissipation
• Used with inverter front-ends handling elevated voltages
• Can be used for ruggedised controls across wide temperatures
• Suitable for Compact PCB power modules with surface-mount components

What temperature extremes can it tolerate during operation?

It is specified to operate from -55°C up to +175°C.

How many pins does the package present for layout planning?

The device is supplied in a 7-pin package for PCB footprint reference.

What mounting method is required for assembly?

It is intended for surface mounting in a TO-263 footprint.

What channel conduction type does it use for switching?

It employs an N-type channel in enhancement mode for controlled switching.

Is it designed to meet automotive standards?

It is not designated as compliant with automotive standards.