Infineon IMBF1 N-Channel MOSFET, 7.4 A, 1.7 kV Enhancement, 7-Pin TO-263 IMBF170R650M1XTMA1

RS-stocknr.:: 222-4850
Fabrikantnummer:: IMBF170R650M1XTMA1
Fabrikant:: Infineon

Infineon IMBF1 N-Channel MOSFET, 7.4 A, 1.7 kV Enhancement, 7-Pin TO-263 IMBF170R650M1XTMA1

Subtotaal (1000 eenheden, op een rol van 1000)*

€ 2.268,00

(excl. BTW)

€ 2.744,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Verzending vanaf 07 oktober 2027

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Aantal stuks	Per stuk	Per rol*
1000 +	€ 2,268	€ 2.268,00

*prijsindicatie

RS-stocknr.:: 222-4850
Fabrikantnummer:: IMBF170R650M1XTMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	7.4A
	Maximum Drain Source Voltage Vds	1.7kV
	Series	IMBF1
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	650mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	88W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	23V
	Maximum Operating Temperature	+175°C
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 7.4A
	Maximum Drain Source Voltage Vds 1.7kV
	Series IMBF1
	Package Type TO-263
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 650mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 88W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 23V
	Maximum Operating Temperature +175°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IMBF170R650M1XTMA1

Infineon IMBF1 Series MOSFET, 1700V Drain Source Voltage, 7.4A Continuous Drain Current - IMBF170R650M1XTMA1

This MOSFET is a high-voltage, N-channel enhancement device intended for power switching in demanding thermal environments. It is supplied in a TO-263 surface-mount package and is designed to handle elevated voltages and moderate continuous currents while operating across a wide temperature range.

Features and Benefits:

• 1700V drain-source rating for high-voltage switching applications
• 650mΩ Rds minimises conduction losses at low to moderate currents
• 88W power dissipation supports significant heat-handling capability
• 7.4A continuous drain current for sustained power delivery
• −55°C to 175°C operation covers harsh thermal environments
• 23V gate tolerance enables robust gate-drive margins

Applications

• Suitable for high-voltage power converters and inverters
• Ideal for industrial motor drive front ends
• Used for switch-mode power supplies in elevated temperature settings
• Can be used for line-side switching in power distribution
• Used with heat-sinking arrangements on surface-mounted boards

What mounting style does this component require?

It is supplied in a TO-263 package intended for surface mounting to a PCB with appropriate thermal land patterns.

What channel type and mode should designers expect?

The device uses an N-channel configuration and operates in enhancement mode for conventional gate-driven switching.

How does ambient temperature affect its suitability?

Its specified operating range from −55°C to 175°C permits use in environments with extreme cold and high thermal stress without derating beyond stated limits.

What is the maximum permitted gate-to-source voltage?

The maximum gate-source voltage is 23V, which defines the allowable gate-drive amplitude for safe operation.

Is this designed to automotive standards?

It is not specified as meeting automotive-grade standards and should not be assumed compliant with automotive qualification requirements.