STMicroelectronics STH285N10F8-6AG N-Channel Power MOSFET, 58 A, 650 V Enhancement Mode, 4-Pin PG-TO-247 STW65N040M9-4
- RS-stocknr.:
- 800-466
- Fabrikantnummer:
- STW65N040M9-4
- Fabrikant:
- STMicroelectronics
Afbeelding representeert productcategorie
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 7,93
(excl. BTW)
€ 9,60
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 300 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 7,93 |
| 10 - 49 | € 7,73 |
| 50 - 99 | € 7,55 |
| 100 + | € 7,07 |
*prijsindicatie
- RS-stocknr.:
- 800-466
- Fabrikantnummer:
- STW65N040M9-4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-TO-247 | |
| Series | STH285N10F8-6AG | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 37mΩ | |
| Channel Mode | Enhancement Mode | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 321W | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.1mm | |
| Height | 21.1mm | |
| Length | 15.9mm | |
| Standards/Approvals | ECOPACK | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-TO-247 | ||
Series STH285N10F8-6AG | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 37mΩ | ||
Channel Mode Enhancement Mode | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 321W | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 5.1mm | ||
Height 21.1mm | ||
Length 15.9mm | ||
Standards/Approvals ECOPACK | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area.
Very low FOM (RDS(on)·Qg)
Higher dv/dt capability
Excellent switching performance
Easy to drive
100% avalanche tested
Excellent switching performance thanks to the extra driving source pin
Gerelateerde Links
- STMicroelectronics STH285N10F8-6AG N-Channel Power MOSFET 100 V Enhancement Mode, 3-Pin H2PAK STH285N10F8-6AG
- STMicroelectronics STH285N10F8-6AG N-Channel Power MOSFET 60 V Enhancement Mode, 8-Pin PowerFLAT STL130N6LF7
- STMicroelectronics STH285N10F8-6AG N-Channel Power MOSFET 1200 V Enhancement Mode, 3-Pin H2PAK-2 STH8N120K5-2AG
- Infineon IPW MOSFET 650 V PG-TO-247
- Infineon IPW MOSFET 650 V PG-TO-247 IPW65R050CFD7AXKSA1
- Infineon IPW MOSFET 650 V, 3-Pin PG-TO-247
- Infineon IPW MOSFET 650 V, 3-Pin PG-TO-247 IPW60R105CFD7XKSA1
- Infineon IKZA75N65EH7XKSA1 4-Pin PG-TO-247-4-STD-NT3.7, Through Hole