Infineon IPW Type N-Channel MOSFET, 69 A, 650 V, 3-Pin PG-TO-247 IPW65R029CFD7XKSA1

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RS-stocknr.:
258-3911
Fabrikantnummer:
IPW65R029CFD7XKSA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

69A

Maximum Drain Source Voltage Vds

650V

Package Type

PG-TO-247

Series

IPW

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

29mΩ

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

305W

Typical Gate Charge Qg @ Vgs

145nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon 650V CoolMOS CFD7 super junction MOSFET in TO-247 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.

650V breakdown voltage

Significantly reduced switching losses compared to competition

Lowest RDS(on) dependency over temperature

Excellent hard-commutation ruggedness

Extra safety margin for designs with increased bus voltage

Enabling increased power density

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