Vishay SI P-Channel Single MOSFETs, -120 A, -60 V Enhancement Mode, 3-Pin TO-263 SQM120P06-07L_NE3
- RS-stocknr.:
- 829-359
- Fabrikantnummer:
- SQM120P06-07L_NE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 3,79
(excl. BTW)
€ 4,59
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 14 januari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 3,79 |
| 10 - 99 | € 2,48 |
| 100 - 499 | € 1,86 |
| 500 - 799 | € 1,60 |
| 800 + | € 1,57 |
*prijsindicatie
- RS-stocknr.:
- 829-359
- Fabrikantnummer:
- SQM120P06-07L_NE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | P-Channel | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | -120A | |
| Maximum Drain Source Voltage Vds | -60V | |
| Package Type | TO-263 | |
| Series | SI | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.0067Ω | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.57mm | |
| Width | 10.28mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 10.16mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type P-Channel | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id -120A | ||
Maximum Drain Source Voltage Vds -60V | ||
Package Type TO-263 | ||
Series SI | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.0067Ω | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Height 4.57mm | ||
Width 10.28mm | ||
Standards/Approvals RoHS Compliant | ||
Length 10.16mm | ||
Automotive Standard No | ||
- Land van herkomst:
- GB
The Vishay automotive P-Channel power MOSFET designed for high-performance applications, providing a robust solution for effective power management in automotive environments.
TrenchFET technology enhances efficiency and reduces power loss
AEC-Q101 qualified for reliability in automotive applications
Low thermal resistance package ensures optimal heat dissipation
Excellent on-state resistance at varying gate voltages improves performance
Gerelateerde Links
- Vishay Single SQM 1 Type P-Channel TrenchFET Power MOSFET 60 V, 3-Pin TO-263 SQM120P06-07L_GE3
- Vishay Single SQM 1 Type P-Channel TrenchFET Power MOSFET 60 V, 3-Pin TO-263
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263 IPB120P04P404ATMA2
- Vishay SI N channel-Channel Single MOSFETs 80 V Enhancement Mode, 8-Pin P SIR580DP-T1-UE3
- Vishay SI N channel-Channel Single MOSFETs 80 V Enhancement Mode, 8-Pin P SIR580LDP-T1-UE3
- Vishay SI N channel-Channel Single MOSFETs 30 V Enhancement Mode, 6-Pin P SIA432BDJ-T1-GE3
- Infineon OptiMOS P Type P-Channel Power Transistor 40 V Enhancement, 3-Pin TO-263